Influence of the hydrogenation on the physical properties of Si-doped ZnO films in the application of transparent conducting oxides
English Abstract
Abstract:
ZnO doped with different amounts of Si ions (ZnO: Si) nano-composite films deposited on glass substrates has been prepared by vapor deposition technique. The influences of Si-doping on the structural and optical properties have been studied. The crystalline structure was gradually deteriorated by increasing the Si- contents. The prepared films were annealed in a hydrogen atmosphere to study the effects on the properties. It was found that the hydrogenation accelerated the crystalline disorder. The conduction parameters were concluded. The carrier concentration of the host ZnO was increased by ~ 46 % by increasing the Si- content by ~ 4.7at %.
Identifier
https://digitalrepository.uob.edu.bh/id/959362d2-0f56-4331-9457-f266b20d286b
