Finite Element Approach of Unshielded Multiconductor Transmission Lines Embedded in Layered Dielectric Region for VLSI Circuits
Linked Agent
Sadiku, Matthew N. O. , Author
Country of Publication
Kingdom of Bahrain
Place Published
Sakhir, Bahrain
Publisher
University of Bahrain
Date Issued
2012
Language
English
Description
Abstract :
This paper presents the quasi-TEM approach for the analysis of unshielded multiconductor transmission lines interconnect in single and two-layered dielectric region using the finite element method (FEM). We mainly focus on designing of four-transmission lines embedded in two-layered dielectric media and five-transmission lines interconnect in single-layered dielectric medium. We compute the capacitance matrices for these configurations. Also, we determine the quasi-TEM spectral for the potential distribution of the integrated circuits.
Keywords: Capacitance per unit length; fnite element method; VLSI; multiconductor; transmssion lines
This paper presents the quasi-TEM approach for the analysis of unshielded multiconductor transmission lines interconnect in single and two-layered dielectric region using the finite element method (FEM). We mainly focus on designing of four-transmission lines embedded in two-layered dielectric media and five-transmission lines interconnect in single-layered dielectric medium. We compute the capacitance matrices for these configurations. Also, we determine the quasi-TEM spectral for the potential distribution of the integrated circuits.
Keywords: Capacitance per unit length; fnite element method; VLSI; multiconductor; transmssion lines
Member of
Identifier
https://digitalrepository.uob.edu.bh/id/2a6397c5-cce9-4b19-a9ae-fe13fadfa2db
https://digitalrepository.uob.edu.bh/id/2a6397c5-cce9-4b19-a9ae-fe13fadfa2db